STP180N10F3
MOSFET N-CH 100V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP180N10F3 is an N-Channel Power MOSFET from the STripFET™ III series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 120A at 25°C, with a maximum power dissipation of 315W (Tc). The Rds On is specified at a low 5.1mOhm at 60A and 10V gate drive. Designed with a through-hole mounting type in a TO-220-3 package, this MOSFET offers a gate charge of 114.6 nC at 10V and input capacitance (Ciss) of 6665 pF at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in power supply units, automotive applications, and industrial motor control.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 114.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6665 pF @ 25 V |
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