STP17N62K3
MOSFET N-CH 620V 15.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP17N62K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 620V and a continuous Drain Current (Id) of 15.5A at 25°C (Tc). The device offers a low on-resistance of 380mOhm (Max) at 7.5A and 10V (Vgs), with a maximum power dissipation of 190W (Tc). Key parameters include a Gate Charge (Qg) of 94nC (Max) at 10V and an input capacitance (Ciss) of 2500pF (Max) at 50V. It operates at a junction temperature up to 150°C and is housed in a standard TO-220-3 package for through-hole mounting. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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