STP170N8F7
MOSFET N-CH 80V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ F7 series STP170N8F7 is an N-Channel Power MOSFET designed for demanding applications. This device offers a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). Featuring a low on-resistance (Rds On) of 3.9mOhm at 60A and 10V gate drive, this MOSFET utilizes advanced STripFET™ F7 technology for enhanced performance. The STP170N8F7 is housed in a standard TO-220-3 through-hole package, facilitating integration into various power management systems. Key electrical characteristics include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 8710 pF at 40V. This component finds application in power supplies, motor control, and automotive systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8710 pF @ 40 V |
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