STP16NS25FP
MOSFET N-CH 250V 16A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP16NS25FP is an N-channel power MOSFET from the MESH OVERLAY™ series, designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 16 A at 25°C, with a maximum power dissipation of 40 W (Tc). The device offers a low on-resistance (Rds On) of 280mOhm at 8A and 10V drive voltage. Key electrical characteristics include a gate charge (Qg) of 83 nC at 10V and input capacitance (Ciss) of 1270 pF at 25V. The STP16NS25FP is housed in a TO-220FP package, suitable for through-hole mounting. It operates across a wide temperature range of -65°C to 150°C (TJ). This MOSFET is commonly utilized in industrial power supplies, lighting control, and automotive applications where robust switching performance is critical.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |
Request a Quote
Clients Also Buy
STB19NF20
MOSFET N-CH 200V 15A D2PAK
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
STD5N20T4
MOSFET N-CH 200V 5A DPAK
