STP16NS25
MOSFET N-CH 250V 16A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP16NS25 is a high-performance N-Channel power MOSFET from the MESH OVERLAY™ series. This component offers a high drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 16A at 25°C, with a maximum power dissipation of 140W (Tc). It features a low on-resistance (Rds On) of 280mOhm at 8A and 10V, and a gate charge (Qg) of 83 nC at 10V. The STP16NS25 is housed in a standard TO-220-3 through-hole package, suitable for applications requiring robust power switching. This device is commonly utilized in power supply units, motor control, and industrial automation systems. The operating temperature range is -65°C to 150°C (TJ).
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |
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