STP16NM50N
MOSFET N-CH 500V 15A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP16NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 15A at 25°C (Tc). With a maximum Rds(on) of 260mOhm at 7.5A and 10V, it offers efficient switching characteristics. The STP16NM50N is packaged in a TO-220AB through-hole configuration, supporting a maximum power dissipation of 125W (Tc) and an operating junction temperature of 150°C. Key parameters include a Gate Charge (Qg) of 38 nC at 10V and Input Capacitance (Ciss) of 1200 pF at 50V. This component finds application in power supply units, industrial power control, and consumer electronics.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |
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