STP16NK65Z
MOSFET N-CH 650V 13A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP16NK65Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 13 A at 25°C (Tc). The Rds On is rated at a maximum of 500 mOhm at 6.5 A and 10 V Vgs. With a maximum power dissipation of 190 W (Tc), this device utilizes a TO-220-3 through-hole package. Key parameters include a Gate Charge (Qg) of 89 nC (max) at 10 V and an Input Capacitance (Ciss) of 2750 pF (max) at 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power factor correction, switch mode power supplies, and lighting applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2750 pF @ 25 V |
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