STP16NK60Z
MOSFET N-CH 600V 14A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP16NK60Z, a SuperMESH™ N-Channel Power MOSFET, offers a 600V drain-source breakdown voltage and a continuous drain current of 14A at 25°C (Tc). This through-hole TO-220-3 packaged device features low on-resistance of 420mOhm maximum at 7A and 10V, with a gate charge of 86 nC maximum at 10V. The device supports a maximum power dissipation of 190W (Tc) and operates at junction temperatures up to 150°C. It is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
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