Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STP16NF25

Banner
productimage

STP16NF25

MOSFET N-CH 250V 14A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP16NF25 is a high-performance N-Channel Power MOSFET from the STripFET™ II series. This Through Hole component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 14A at 25°C (Tc). With a maximum power dissipation of 100W (Tc) and a low on-resistance of 235mOhm at 6.5A and 10V, it is optimized for efficient power switching. Key parameters include a gate charge (Qg) of 18nC at 10V and input capacitance (Ciss) of 680pF at 25V. The STP16NF25 is suitable for applications in industrial power supplies, automotive systems, and general-purpose power switching. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in a standard TO-220-3 package.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs235mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STN2NF10

MOSFET N-CH 100V 2.4A SOT-223

product image
STN4NF03L

MOSFET N-CH 30V 6.5A SOT223

product image
STD20NF06LT4

MOSFET N-CH 60V 24A DPAK