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STP16NF06FP

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STP16NF06FP

MOSFET N-CH 60V 11A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP16NF06FP is an N-channel power MOSFET from the STripFET™ II series. This component features a 60V drain-to-source voltage (Vds) and supports a continuous drain current (Id) of 11A at 25°C (Tc), with a maximum power dissipation of 25W (Tc). The device exhibits a maximum on-resistance (Rds On) of 100mOhm at 8A and 10V gate-to-source voltage (Vgs). Key parameters include a gate charge (Qg) of 13 nC (max) at 10V and an input capacitance (Ciss) of 315 pF (max) at 25V. It operates with a drive voltage of 10V and has a maximum Vgs of ±20V. The STP16NF06FP is housed in a TO-220FP package with a through-hole mounting type and an operating temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply, motor control, and automotive applications.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 25 V

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