STP16N60M2
MOSFET N-CH 600V 12A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP16N60M2 is a 600V N-Channel Power MOSFET from the MDmesh™ M2 series. This device offers a continuous drain current of 12A (Tc) and a maximum power dissipation of 110W (Tc) in a TO-220 package. Key parameters include a drain-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 320mOhm at 6A and 10V, and a gate charge (Qg) of 19nC at 10V. With a junction temperature rating of 150°C, this MOSFET is suitable for applications in power supply units, solar inverters, and industrial motor control.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
Request a Quote
Clients Also Buy
STB33N65M2
MOSFET N-CH 650V 24A D2PAK
STN6N60M2
MOSFET N-CH 600V 5.5A SOT223-2
STD16N65M2
MOSFET N-CH 650V 11A DPAK
