STP16N50M2
MOSFET N-CH 500V 13A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP16N50M2 is an N-channel Power MOSFET from the MDmesh™ M2 series. This device offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The STP16N50M2 features a low on-resistance (Rds On) of 280mOhm at 6.5A and 10V, and a gate charge (Qg) of 19.5 nC at 10V. It is packaged in a TO-220-3 through-hole configuration, suitable for applications requiring robust power handling. Key parameters include input capacitance (Ciss) of 710 pF at 100V and a threshold voltage (Vgs(th)) of 4V at 250µA. This component is utilized in power supply units, lighting systems, and industrial motor control.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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