STP165N10F4
MOSFET N-CH 100V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP165N10F4 is an N-Channel STripFET™ DeepGATE™ Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 315W (Tc). The device exhibits a low on-resistance (Rds On) of 5.5mOhm at 60A and 10V, coupled with a gate charge (Qg) of 180 nC at 10V. It is housed in a standard TO-220AB package, allowing for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial automation, power supply units, and automotive applications where robust power handling is critical.
Additional Information
Series: DeepGATE™, STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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