STP160N75F3
MOSFET N-CH 75V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP160N75F3 is an N-Channel Power MOSFET from the STripFET™ series. This component offers a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 120A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm at 60A and 10V. Key characteristics include a gate charge (Qg) of 85 nC (Max) at 10V and an input capacitance (Ciss) of 6750 pF (Max) at 25V. The STP160N75F3 is housed in a TO-220-3 package, suitable for through-hole mounting. With a maximum power dissipation of 330W (Tc), it is designed for demanding applications in the automotive and industrial sectors requiring high current handling and efficient switching. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 25 V |
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