STP160N3LL
MOSFET N-CH 30V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP160N3LL is an N-Channel Power MOSFET from the STripFET™ H6 series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C with a maximum power dissipation of 136W. The STP160N3LL offers a low on-resistance (Rds On) of 3.2mOhm at 60A and 10V drive. Key parameters include a gate charge (Qg) of 42 nC at 4.5V and input capacitance (Ciss) of 3500 pF at 25V. It is housed in a through-hole TO-220-3 package, suitable for a wide operating temperature range of -55°C to 175°C. This device finds application in power supply units and automotive systems.
Additional Information
Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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