STP15NM65N
MOSFET N-CH 650V 12A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP15NM65N, a member of the MDmesh™ II series, is a 650 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current (Id) of 12A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). With a low on-resistance (Rds On) of 380mOhm at 6A and 10V, it minimizes conduction losses. The device boasts a low gate charge (Qg) of 33.3 nC at 10V and an input capacitance (Ciss) of 983 pF at 50V, contributing to efficient switching performance. The STP15NM65N is packaged in a standard TO-220-3 through-hole configuration, suitable for various industrial and consumer electronics, including power supplies and motor control systems. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±25V.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 983 pF @ 50 V |