STP15NM60ND
MOSFET N-CH 600V 14A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP15NM60ND, an N-Channel Power MOSFET from the FDmesh™ II series, features a Drain-Source Voltage (Vdss) of 600V and continuous drain current (Id) of 14A at 25°C (Tc). This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 125W (Tc). With a typical Rds On of 299mOhm at 7A and 10V, and a gate charge of 40 nC @ 10V, this device is suitable for high-voltage switching applications. Operating temperature ranges from -55°C to 150°C (TJ). Applications include power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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