STP15N65M5
MOSFET N CH 650V 11A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP15N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This component offers a continuous drain current of 11A (Tc) and a maximum power dissipation of 125W (Tc). Key electrical parameters include a Vgs(th) of 5V @ 250µA and a low Rds(on) of 340mOhm @ 5.5A, 10V. The device features a gate charge (Qg) of 22 nC @ 10V and an input capacitance (Ciss) of 810 pF @ 100V. Designed for through-hole mounting, it comes in a TO-220-3 package. Operating temperature reaches up to 150°C (TJ) with a maximum gate-source voltage of ±25V. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 100 V |
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