STP150NF55
MOSFET N-CH 55V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP150NF55, an N-Channel STripFET™ II Power MOSFET, offers a 55V drain-source voltage and a continuous drain current of 120A at 25°C. This component features a low on-resistance of 6mOhm maximum at 60A and 10V, with a 10V gate drive voltage. The STP150NF55 has a maximum power dissipation of 300W and a gate charge of 190 nC at 10V. Its input capacitance (Ciss) is 4400 pF at 25V. Packaged in a TO-220-3 through-hole configuration, this device operates across a temperature range of -55°C to 175°C. It is suitable for applications in automotive and industrial power systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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