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STP150N3LLH6

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STP150N3LLH6

MOSFET N-CH 30V 80A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP150N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C. Its low on-resistance is specified at 3.3mOhm maximum for 40A drain current and 10V gate-source voltage. The device offers a gate charge (Qg) of 40nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 4040pF maximum at 25V Vds. With a maximum power dissipation of 110W at 25°C case temperature and an operating temperature range of -55°C to 175°C, this through-hole TO-220-3 packaged MOSFET is suitable for applications in power management and automotive sectors. The drive voltage range is from 4.5V to 10V, with a maximum gate-source voltage of ±20V.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4040 pF @ 25 V

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