STP150N3LLH6
MOSFET N-CH 30V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP150N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C. Its low on-resistance is specified at 3.3mOhm maximum for 40A drain current and 10V gate-source voltage. The device offers a gate charge (Qg) of 40nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 4040pF maximum at 25V Vds. With a maximum power dissipation of 110W at 25°C case temperature and an operating temperature range of -55°C to 175°C, this through-hole TO-220-3 packaged MOSFET is suitable for applications in power management and automotive sectors. The drive voltage range is from 4.5V to 10V, with a maximum gate-source voltage of ±20V.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4040 pF @ 25 V |
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