STP150N10F7AG
N-CHANNEL 100 V STRIPFET F7 POWEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP150N10F7AG is an N-channel MOSFET featuring a 100V drain-source voltage (Vdss) and a low on-resistance of 4.2mOhm at 55A and 10V gate-source voltage. This device offers a continuous drain current of 110A (Tc) and a maximum power dissipation of 250W (Tc). The STP150N10F7AG utilizes STMicroelectronics' StripeFET F7 technology and is packaged in a TO-220-3 through-hole configuration. Key parameters include a gate charge (Qg) of 127 nC @ 10 V and input capacitance (Ciss) of 9000 pF @ 50 V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 50 V |
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