STP150N10F7
MOSFET N-CH 100V 110A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP150N10F7 is a 100V N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a low Rds(on) of 4.2mOhm at 55A and 10V, enabling efficient power handling. With a continuous drain current capability of 110A (Tc) and a maximum power dissipation of 250W (Tc), it is suitable for demanding applications. Key electrical parameters include a Vgs(th) of 4.5V (max) at 250µA, a gate charge (Qg) of 117 nC (max) at 10V, and input capacitance (Ciss) of 8115 pF (max) at 50V. The STP150N10F7 is housed in a TO-220-3 package, designed for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). This device finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8115 pF @ 50 V |
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