STP14NM65N
MOSFET N-CH 650V 12A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP14NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12 A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 380 mOhm at 6 A and 10 V, and a gate charge (Qg) of 45 nC at 10 V. The input capacitance (Ciss) is specified at 1300 pF maximum at 50 V. Designed for through-hole mounting, it is housed in a TO-220-3 package. The maximum power dissipation (Pd) is 125 W (Tc), with an operating junction temperature (Tj) up to 150°C. This device is suitable for applications in power factor correction and switch-mode power supplies.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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