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STP14NF12

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STP14NF12

MOSFET N-CH 120V 14A TO220-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

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STMicroelectronics STP14NF12 is a power MOSFET featuring an N-Channel enhancement mode configuration within the STripFET™ II series. This device offers a Drain-Source Voltage (Vdss) of 120V and a continuous Drain Current (Id) of 14A at 25°C (Tc). The STP14NF12 exhibits a maximum On-Resistance (Rds On) of 180mOhm at 7A and 10V Vgs, with a typical Gate Charge (Qg) of 21 nC at 10V. Its high switching speed and efficient power dissipation of 60W (Tc) make it suitable for applications in power supply units, motor control, and automotive systems. The component is packaged in a standard TO-220-3 through-hole configuration, ensuring robust thermal management and ease of integration into existing designs. Operating temperature ranges from -55°C to 175°C, with a maximum Gate-Source Voltage (Vgs) of ±20V.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 25 V

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