STP141NF55
MOSFET N-CH 55V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP141NF55 is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance, specified as 8mOhm at 40A and 10V (Vgs), minimizes conduction losses. Key parameters include a gate-source threshold voltage (Vgs(th)) of 4V (max) at 250µA and a gate charge (Qg) of 142 nC (max) at 10V. The input capacitance (Ciss) is 5300 pF (max) at 25V. The STP141NF55 is housed in a standard TO-220-3 package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power supplies, and power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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