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STP140NF55

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STP140NF55

MOSFET N-CH 55V 80A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP140NF55 is a high-performance N-Channel MOSFET from the STripFET™ II series. This through-hole component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 80 A (Tc) at 25°C. The low on-resistance (Rds On) of 8 mOhm at 40A, 10V, coupled with a maximum power dissipation of 300W (Tc), makes it suitable for demanding power applications. Key parameters include a Gate Charge (Qg) of 142 nC @ 10 V and an input capacitance (Ciss) of 5300 pF @ 25 V. The STP140NF55 is designed for operation within an extended temperature range of -55°C to 175°C (TJ). This device is commonly utilized in power supply units, motor control, and automotive electronics. The component is supplied in a TO-220-3 package.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V

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