STP140N8F7
MOSFET N-CH 80V 90A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP140N8F7 is an N-channel Power MOSFET from the STripFET™ VII series, designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 90A at 25°C (Tc). With a low on-resistance (Rds On) of 4.3mOhm at 45A and 10V, it minimizes conduction losses. The MOSFET boasts a maximum power dissipation of 200W (Tc) and a typical gate charge (Qg) of 96 nC at 10V, facilitating efficient switching. Its through-hole TO-220-3 package ensures robust mounting and thermal performance. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is suitable for demanding applications in sectors such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6340 pF @ 40 V |
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