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STP140N6F7

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STP140N6F7

MOSFET N-CH 60V 80A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP140N6F7 is an N-Channel STripFET™ MOSFET designed for demanding power applications. This component features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 80 A at 25°C (Tc). With a maximum power dissipation of 158 W (Tc) and a low on-resistance (Rds On) of 3.5 mOhm at 40 A and 10 V, it ensures efficient power transfer. The STP140N6F7 utilizes a TO-220-3 through-hole package, suitable for thermal management in high-power designs. Key parameters include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 3100 pF at 10 V. Operating temperature reaches up to 175°C (TJ). This device finds application in automotive, industrial, and consumer electronics power management systems.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)158W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 10 V

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