STP140N6F7
MOSFET N-CH 60V 80A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP140N6F7 is an N-Channel STripFET™ MOSFET designed for demanding power applications. This component features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 80 A at 25°C (Tc). With a maximum power dissipation of 158 W (Tc) and a low on-resistance (Rds On) of 3.5 mOhm at 40 A and 10 V, it ensures efficient power transfer. The STP140N6F7 utilizes a TO-220-3 through-hole package, suitable for thermal management in high-power designs. Key parameters include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 3100 pF at 10 V. Operating temperature reaches up to 175°C (TJ). This device finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 10 V |
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