STP13NM60ND

MOSFET N-CH 600V 11A TO220

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STMicroelectronics STP13NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device offers a continuous drain current of 11A (Tc) at 25°C and a maximum power dissipation of 109W (Tc). Key electrical characteristics include a low Rds(on) of 380mOhm at 5.5A, 10V, with a gate-source voltage range of ±25V. The STP13NM60ND features a gate charge of 24.5 nC at 10V and an input capacitance of 845 pF at 50V. Designed for through-hole mounting, it is packaged in a standard TO-220-3 configuration. This MOSFET is suitable for applications in power supplies, motor control, and lighting.

Additional Information

Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tube

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Technical Details:

Packaging	Tube
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Rds On (Max) @ Id, Vgs	380mOhm @ 5.5A, 10V
FET Feature	-
Power Dissipation (Max)	109W (Tc)
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±25V
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	845 pF @ 50 V