STP13NM50N

MOSFET N-CH 500V 12A TO220AB

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STMicroelectronics STP13NM50N, an N-Channel Power MOSFET from the MDmesh™ II series, offers robust performance with a 500V drain-source voltage and 12A continuous drain current at 25°C. This through-hole TO-220AB packaged device features a maximum Rds(on) of 320mOhm at 6A and 10V gate-source voltage. Key characteristics include a typical gate charge of 30nC at 10V and input capacitance of 960pF at 50V. The STP13NM50N is suitable for applications requiring high voltage switching and efficient power conversion, commonly found in power supplies, industrial automation, and renewable energy systems. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube

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Technical Details:

Packaging	Tube
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	320mOhm @ 6A, 10V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±25V
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	960 pF @ 50 V