STP13NK50Z

MOSFET N-CH 500V 11A TO220AB

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STMicroelectronics STP13NK50Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at 25°C. With a maximum power dissipation of 140W (Tc) and a low Rds(on) of 480mOhm at 6.5A and 10V gate drive, it ensures efficient operation. Key parameters include a Gate Charge (Qg) of 47 nC (Max) at 10V and an Input Capacitance (Ciss) of 1600 pF (Max) at 25V. The STP13NK50Z features a TO-220-3 through-hole package, suitable for demanding thermal management. This device is commonly utilized in power supply units, lighting controls, and motor drive circuits within the industrial and consumer electronics sectors. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:

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Technical Details:

Packaging	Tube
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Rds On (Max) @ Id, Vgs	480mOhm @ 6.5A, 10V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Vgs(th) (Max) @ Id	4.5V @ 100µA
Supplier Device Package	TO-220
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V