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STP130NH02L

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STP130NH02L

MOSFET N-CH 24V 90A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP130NH02L is an N-channel STripFET™ Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 90A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance is specified as 4.4mOhm at 45A and 10V, with a gate drive range of 5V to 10V. Key characteristics include a typical gate charge (Qg) of 93 nC at 10V and an input capacitance (Ciss) of 4450 pF at 15V. It has a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. The STP130NH02L is housed in a standard TO-220-3 through-hole package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in power supply units, automotive systems, and industrial motor control.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 45A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4450 pF @ 15 V

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