STP130N6F7

MOSFET N-CH 60V 80A TO220AB

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The STMicroelectronics STP130N6F7 is an N-channel STripFET™ F7 series MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 160 W (Tc). Its low on-resistance is specified as 5 mOhm at 40 A and 10 V (Vgs). The device offers a gate charge (Qg) of 42 nC maximum at 10 V and an input capacitance (Ciss) of 2600 pF maximum at 25 V (Vds). Housed in a TO-220-3 package, it supports through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tube

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Technical Details:

Packaging	Tube
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	5mOhm @ 40A, 10V
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 25 V