STP12PF06
MOSFET P-CH 60V 12A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP12PF06 is a P-Channel STripFET™ II MOSFET designed for demanding applications. This through-hole component features a Drain to Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 12 A at 25°C (Tc). The Rds On is specified at a maximum of 200 mOhm at 10A and 10V. With a maximum power dissipation of 60W (Tc), it is suitable for applications requiring efficient power handling. The device operates across a temperature range of -55°C to 175°C (TJ) and comes in a TO-220-3 package. Key parameters include a gate charge (Qg) of 21 nC @ 10 V and input capacitance (Ciss) of 850 pF @ 25 V. This MOSFET is utilized in various industrial and automotive sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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