STP12NM60N
MOSFET N-CH 600V 10A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP12NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a 600 V breakdown voltage (Vdss) and a continuous drain current capability of 10 A at 25°C (Tc). It features a low on-resistance (Rds On) of 410 mOhm maximum at 5 A, 10 V, and a gate charge (Qg) of 30.5 nC typical at 10 V. The device is housed in a TO-220 package with through-hole mounting. Key specifications include a maximum power dissipation of 90 W (Tc) and an operating temperature range from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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