STP12NM50N
MOSFET N-CH 500V 11A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP12NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 11A (Tc) at 25°C. The device offers a maximum Rds On of 380mOhm at 5.5A and 10V, with a gate-source voltage (Vgs) tolerance of ±25V. Key parameters include a gate charge (Qg) of 30 nC @ 10V and input capacitance (Ciss) of 940 pF @ 50V. The STP12NM50N has a maximum power dissipation of 100W (Tc) and is housed in a TO-220-3 package designed for through-hole mounting. It operates within an industrial temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 50 V |
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