STP12NM50FD
MOSFET N-CH 500V 12A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP12NM50FD is an N-Channel Power MOSFET designed for high-performance applications. This device features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). With a low on-resistance (Rds On) of 400mOhm at 6A and 10V, it minimizes conduction losses. The STP12NM50FD is part of STMicroelectronics' FDmesh™ series, known for its efficient switching characteristics. Key parameters include a gate charge (Qg) of 12 nC @ 10V and input capacitance (Ciss) of 1000 pF @ 25V. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting, and offers a power dissipation of 160W (Tc). This component is commonly utilized in power supplies, motor control, and industrial automation systems.
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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