STP12NK80Z
MOSFET N-CH 800V 10.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP12NK80Z is an N-Channel SuperMESH™ Power MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 10.5A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The Rds On is specified at a maximum of 750mOhm at 5.25A and 10V Vgs. Key parameters include Input Capacitance (Ciss) of 2620pF (max) at 25V Vds and Gate Charge (Qg) of 87nC (max) at 10V Vgs. The STP12NK80Z is housed in a TO-220AB package for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This component is widely utilized in power factor correction, switch mode power supplies, and general purpose high voltage switching applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V |
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