STP12NK60Z
MOSFET N-CH 600V 10A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP12NK60Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 10 A at 25°C (Tc). With a maximum power dissipation of 150 W (Tc) and an Rds(on) of 640 mOhm at 5 A and 10 V, it offers efficient switching performance. The gate charge (Qg) is 59 nC at 10 V, and input capacitance (Ciss) is 1740 pF at 25 V. This component utilizes Metal Oxide technology and is housed in a TO-220-3 through-hole package. Suitable for industrial, automotive, and power supply applications, the STP12NK60Z supports a maximum junction temperature of 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 640mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 25 V |
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