STP12N65M5
MOSFET N-CH 650V 8.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP12N65M5 is a 650V N-Channel MOSFET from the MDmesh™ V series. This through-hole component, packaged in a TO-220AB, offers a continuous drain current of 8.5A (Tc) and a maximum power dissipation of 70W (Tc). Key parameters include a Vgs(th) of 5V @ 250µA, a maximum Rds(on) of 430mOhm @ 4.3A, 10V, and an input capacitance (Ciss) of 900pF @ 100V. The device features a gate charge (Qg) of 22nC @ 10V and operates at junction temperatures up to 150°C. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
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