STP120NF04
MOSFET N-CH 40V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP120NF04 is a N-Channel STripFET™ II Power MOSFET manufactured by STMicroelectronics. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 120A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 5mOhm maximum at 50A and 10V. It is designed for high power applications with a maximum power dissipation of 300W (Tc). The STP120NF04 is packaged in a TO-220-3 through-hole configuration. Key electrical characteristics include a Gate Charge (Qg) of 150 nC maximum at 10V and an Input Capacitance (Ciss) of 5100 pF maximum at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power control, and high-current switching.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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