STP120N4F6
MOSFET N-CH 40V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP120N4F6 is an N-Channel Power MOSFET featuring STripFET™ VI technology. This device offers a 40V drain-source voltage rating and a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance of 4.3mOhm (max) at 40A and 10V, it minimizes conduction losses. The STP120N4F6 is packaged in a TO-220AB through-hole format and supports a maximum power dissipation of 110W (Tc). Key electrical characteristics include a gate charge (Qg) of 65 nC (max) at 10V and an input capacitance (Ciss) of 3850 pF (max) at 25V. This component is qualified to AEC-Q101 and is suitable for automotive applications. Operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
| Qualification | AEC-Q101 |
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