STP11NM65N
MOSFET N-CH 650V 11A TO-220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP11NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This through-hole component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 110W at the same temperature. Key electrical characteristics include a maximum on-resistance (Rds On) of 455mOhm at 5.5A and 10V, and a gate charge (Qg) of 29 nC at 10V. The input capacitance (Ciss) is 800 pF at 50V, and the device operates at temperatures up to 150°C. The STP11NM65N is housed in a TO-220 package and is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 455mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 50 V |
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