STP11NM60ND
MOSFET N-CH 600V 10A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP11NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This component offers a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 90W (Tc) and a low on-resistance of 450mOhm at 5A and 10V, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 850 pF at 50V. The device operates at junction temperatures up to 150°C and is packaged in a TO-220-3 through-hole configuration. This MOSFET is utilized in power supply, lighting, and industrial applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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