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STP11NM60N

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STP11NM60N

MOSFET N-CH 600V 10A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP11NM60N is an N-channel MOSFET from the MDmesh™ II series. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 90W (Tc), it offers a low On-Resistance (Rds On) of 450mOhm at 5A and 10V. The device exhibits a maximum Gate Charge (Qg) of 31 nC at 10V and an input capacitance (Ciss) of 850 pF at 50V. The STP11NM60N is suitable for applications requiring high voltage switching, commonly found in power supplies, lighting, and industrial motor control. It operates at an ambient temperature up to 150°C (TJ) and is supplied in a TO-220-3 package.

Additional Information

Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)90W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V

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