STP11NM60N
MOSFET N-CH 600V 10A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP11NM60N is an N-channel MOSFET from the MDmesh™ II series. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 90W (Tc), it offers a low On-Resistance (Rds On) of 450mOhm at 5A and 10V. The device exhibits a maximum Gate Charge (Qg) of 31 nC at 10V and an input capacitance (Ciss) of 850 pF at 50V. The STP11NM60N is suitable for applications requiring high voltage switching, commonly found in power supplies, lighting, and industrial motor control. It operates at an ambient temperature up to 150°C (TJ) and is supplied in a TO-220-3 package.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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