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STP11NM60FP

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STP11NM60FP

MOSFET N-CH 600V 11A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP11NM60FP is an N-Channel Power MOSFET from the MDmesh™ series. This component features a 600V drain-to-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). With a maximum power dissipation of 35W (Tc) and a low on-resistance of 450mOhm at 5.5A and 10V gate drive, it is optimized for efficient switching. The device has a gate charge (Qg) of 30 nC (max) at 10V and an input capacitance (Ciss) of 1000 pF (max) at 25V. Packaged in a TO-220FP, it supports through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is well-suited for applications in power supplies, lighting, and industrial motor control.

Additional Information

Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V

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