STP11NM60FP
MOSFET N-CH 600V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP11NM60FP is an N-Channel Power MOSFET from the MDmesh™ series. This component features a 600V drain-to-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). With a maximum power dissipation of 35W (Tc) and a low on-resistance of 450mOhm at 5.5A and 10V gate drive, it is optimized for efficient switching. The device has a gate charge (Qg) of 30 nC (max) at 10V and an input capacitance (Ciss) of 1000 pF (max) at 25V. Packaged in a TO-220FP, it supports through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is well-suited for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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