STP11NM60A
MOSFET N-CH 600V 11A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP11NM60A is a 600V N-Channel Power MOSFET from the MDmesh™ series. This through-hole component, packaged in a TO-220AB, offers a continuous drain current of 11A at 25°C and a maximum power dissipation of 110W at 25°C (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 450mOhm at 5.5A and 10V gate drive, and a gate charge (Qg) of 49 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 1211 pF at 25V. This device operates across a temperature range of -55°C to 150°C (TJ). The STP11NM60A is suitable for power supply applications, lighting, and motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1211 pF @ 25 V |
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