STP11NM60
MOSFET N-CH 650V 11A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP11NM60 is a 650V N-Channel Power MOSFET from the MDmesh™ series, designed for efficient power switching applications. This component features a continuous drain current capability of 11A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). The Rds On is rated at a maximum of 450mOhm at 5.5A, 10V. With a gate charge of 30 nC at 10V and input capacitance of 1000 pF at 25V, it offers optimized switching performance. The STP11NM60 is housed in a standard TO-220-3 package, suitable for through-hole mounting. Its operating temperature range is from -65°C to 150°C (TJ). This device finds application in power supplies, industrial automation, and lighting control systems.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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