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STP11NM60

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STP11NM60

MOSFET N-CH 650V 11A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP11NM60 is a 650V N-Channel Power MOSFET from the MDmesh™ series, designed for efficient power switching applications. This component features a continuous drain current capability of 11A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). The Rds On is rated at a maximum of 450mOhm at 5.5A, 10V. With a gate charge of 30 nC at 10V and input capacitance of 1000 pF at 25V, it offers optimized switching performance. The STP11NM60 is housed in a standard TO-220-3 package, suitable for through-hole mounting. Its operating temperature range is from -65°C to 150°C (TJ). This device finds application in power supplies, industrial automation, and lighting control systems.

Additional Information

Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)160W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V

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