STP11NM50N
MOSFET N-CH 500V 8.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP11NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8.5A at 25°C (Tc). It features a low on-resistance (Rds On) of 470mOhm maximum at 4.5A and 10V gate drive. With a maximum power dissipation of 70W (Tc), this through-hole device is packaged in a TO-220AB. Key parameters include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 547 pF at 50V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units and motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 547 pF @ 50 V |
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