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STP11NK50ZFP

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STP11NK50ZFP

MOSFET N-CH 500V 10A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP11NK50ZFP is a SuperMESH™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 10 A at 25°C, with a maximum power dissipation of 30 W (Tc). The device exhibits a low on-resistance (Rds On) of 520 mOhm at 4.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 68 nC at 10 V and input capacitance (Ciss) of 1390 pF at 25 V. The STP11NK50ZFP is housed in a TO-220FP package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting, and motor control applications.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1390 pF @ 25 V

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